Christian A. Zorman, Aaron J. Fleischman, Andrew S. Dewa, Mehran Mehregany, Chacko Jacob, Shigehiro Nishino, Pirouz Pirouz,
Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition Journal of Applied Physics. ,vol. 78, pp. 5136- 5138 ,(1995) ,
10.1063/1.359745