Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations
作者： Andrey Sarikov , Anna Marzegalli , Luca Barbisan , Massimo Zimbone , Corrado Bongiorno
DOI: 10.1039/D0CE01613F
关键词:
摘要: … Under tensile strain condition during carbonization step, the leading 90 PDs are driven toward the 3C-SiC/Si interface and are anchored there, while the trailing 30 ones remain closer …
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