Gallium arsenide and aluminum gallium arsenide reactive ion etching in boron trichloride/argon mixtures

摘要: GaAs and Al0.3Ga0.7As were reactive ion etched in a mixture of boron trichloride argon. The effects the independent variables such as time, power, pressure, gas composition on etch depth well quality resulting surfaces analyzed through multiple linear regression approach. This provided second‐order equations with an excellent ability to describe experimental results. etching conditions for AlGaAs compared optimum parameters equal rate GaAs/Al0.3Ga0.7As layers straight walls obtained. These then sucessfully applied high‐resolution structuring quantum layers, structures small 40 nm etched. addition oxygen produced high‐quality >5:1 selectivity over Al0.3Ga0.7As.