Determination of nonradiative surface layer thickness in quantum dots etched from single quantum well GaAs/AlGaAs

摘要: Low‐temperature cathodoluminescence spectroscopy was used to investigate the luminescence efficiency of reactive ion etched quantum dots, varying in diameter from 200 μm down 60 nm. The found be degraded both with decreasing nanostructure size and increasing etch depth. A solution standard model for diffusion recombination applied data determine surface velocity S. We that dots smaller than length, becomes insensitive value S fails predict there is a dot which completely extinguished. To understand qualitatively degradation nanostructures we describe damage layer thickness ξ. ξ determines smallest structure will still emit light. show increases depth therefore dependent on etching conditions.