Luminescence and Raman Scattering Studies of Ga-As-AlGaAs Quantum Dots
作者： C. M. Sotomayor Torres , P. D. Wang , H. Benisty , C. Weisbuch
DOI: 10.1007/978-3-642-84857-5_29
关键词: Relaxation (NMR) 、 Luminescence 、 Surface phonon 、 Raman spectroscopy 、 Optoelectronics 、 Materials science 、 Quantum wire 、 Molecular physics 、 Phonon 、 Raman scattering 、 Quantum dot
摘要: We present experimental and theoretical results on the low temperature luminescence intensity of dry etched GaAs-AlxGa1−x As quantum dots. The was found to decrease by two orders magnitude with dot sizes from 1µm 60nm. Our intrinsic model emission yield invokes slower momentum energy relaxation mechanisms as lateral dimensions decrease. extrinsic effect, which we include in our interpretation intensity, involves carrier diffusion a surface nonradiative recombination velocity. combined effect (intrinsic extrinsic) gives good fit data. velocity needed for ~105cm/s. Raman studies arrays showed enhanced phonons nanostructure sizes. “GaAs”-like “AlAs”-like were also observed first time nanostructures, agreement predications.
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