Cathodoluminescence measurements using the scanning electron microscope for the determination of semiconductor parameters
作者： W. Hergert , P. Reck , L. Pasemann , J. Schreiber
关键词: Beam voltage 、 Analytical chemistry 、 Recombination velocity 、 Scanning electron microscope 、 Semiconductor 、 Chemistry 、 Cathodoluminescence 、 Attenuation coefficient
摘要: The dependence of the CL-signal on diffusion length L, absorption coefficient α, dead-layer thickness zT, and surface recombination velocity vs is studied in detail. existence a maximum beam voltage Ub discussed. position this α L evaluated. quantitative interpretation experiments n-GaAs explained by means theoretical model developed here. Die Abhangigkeit des CL-Signals von der Diffusionslange dem Absorptionskoeffizienten Totschichtdicke zT und Oberflachenrekombinationsgeschwindigkeit wird detailliert untersucht. Das Auftreten eines Maximums im CL-Signal Beschleuni-gungsspannung diskutiert. Die Lage dieses berechnet. Auswertung Experimenten an mit Hilfe vorgestellten Modells erlautert.
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