Theoretical calculation of cathodoluminescence intensity in GaAs influence of surface defects density ( N t ) and concentration ( N a
作者： A Nouiri , A Djemel , R.J Tarento
DOI: 10.1016/S0167-9317(99)00464-5
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摘要: Abstract A model of calculation the luminescence intensity under cathodic excitation has been performed. The procedure used for such taken into account influence electron beam parameters (energy E 0 , I p ) on depletion region at free semiconductor surface and defects density ( N t concentration a ). recombination minority majority carriers is also examined within Shockley–Read–Hall framework. In addition, continuity equations both are solved in neutral regions, order to deduce self-consistent way concentration, barrier height, thickness obtain cathodoluminescence versus parameters. numerical results show that Z d depends acceptors Consequently, modified.
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