Study of surface defects in GaAs by cathodoluminescence: calculation and experiment
作者： A Djemel , A Nouiri , R-J Tarento
DOI: 10.1088/0953-8984/12/49/338
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摘要: In this work, we propose a model for self-consistent calculation of the cathodoluminescence intensity, which has been used to study surface defects in GaAs materials. model, have taken into account influence on electron beam parameters (energy Eo, intensity Ip) and depletion region (Zd). Without introducting concept `dead layer', calculated dependence CL (defect density Nt energy level associated Et). By comparison experimental results with theoretical curves, some derived.
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