Cathodoluminescence investigations of GaAs thin layers
作者： F. Ben Nasr , A. Matoussi , S. Guermazi , Z. Fakhfakh
DOI: 10.1016/J.PHPRO.2009.11.031
关键词: Atomic physics 、 Dissipation 、 Semiconductor 、 Band gap 、 Beam diameter 、 Attenuation coefficient 、 Cathodoluminescence 、 Excitation 、 Absorption (electromagnetic radiation) 、 Materials science 、 General Physics and Astronomy
摘要: Abstract In this work, we report the theoretical results of cathodoluminescence (CL) for GaAs layer. The simulation CL excitation and intensity is developed using 2-D model based on electron beam energy dissipation taking into account effects carrier diffusion, internal absorption recombination process in semiconductors. We have investigated influence conditions (energy, current diameter) some physical parameters (absorption coefficient, gap energy) intensity. Results allow us particularly to predict evolution shift peak emitted near fundamental as a function energy. A comparative study between simulated experimental spectra at low temperature realized.
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