Variation of GaAs surface charge under an electron beam: effect on cathodoluminescence signal

摘要: This work is a self-consistent calculation model of the GaAs surface charge under electronic bombardment. The due to defects can be influenced by electron-hole pair generated at zone (in depletion region). Numerical results show that donor states decreases cathodic excitation, but when are acceptor type, increases with increasing excitation levels (increasing beam current). In case states, cathodoluminescence (CL) intensity energy level E t , associated density N near conduction band c . same behavior CL has been observed valance v all cases, moves middle gap. According this calculation, it clear variation must taken into account in analysis techniques based on electron beams.