Vapor Annealing as a Post-Processing Technique to Control Carrier Concentrations of Bi2Te3 Thin Films

摘要: This article demonstrates that carrier concentrations in bismuth telluride films can be controlled through annealing vapor pressures of tellurium. For the source with a small excess tellurium all reached steady state concentration 4 x 10 19 carriers/cm 3 Seebeck coefficients -170 μV K -1 . temperatures below 300°C and for film thicknesses 0.4 μm or less, rate-limiting step reaching appeared to mass transport gas phase. At higher temperatures, resulting thicker films, it was expected solid would become rate limiting. The mobility also changed annealing, but at different from concentration, perhaps as consequence non-equilibrium defects trapped studied by low temperature synthesis approach.