High-energy pulse-electron-beam-induced molecular and cellular damage in Saccharomyces cerevisiae.

摘要: The high-energy pulse electron beam (HEPE) is a new method for mutation breeding. Previously, we demonstrated that HEPE radiation improved thermotolerance and ethanol production of Saccharomyces cerevisiae. To investigate the influence on yeast molecular cellular damage, cells were separately treated with at different doses (0, 200, 400, 600, 800, 1000, 1200 1400 Gy). Based results obtained, protein leakage diffusion intracellular nucleotide propidium iodide (PI) uptake assays showed clearly enhanced cell membrane permeability depending dose exposure. Yeast had significantly elevated levels DNA instability, as detected by chromosome spreading assay. These correlated well measurement increased chromosomal aberrations apoptosis. Intracellular reactive oxygen species (ROS) caspase 3 activity also measured in HEPE-applied cells. Caspase appeared to be involved HEPE-induced Use dihydroethidium staining confocal laser scanning microscopy (CLSM) ROS consequence augmented pulsing. Moreover, retained some photoreactivation capacity when exposure was less than 600 Gy. Thereafter, level damage too serious repair. Thus, repair effect upon radiation-induced damage. our studies provide possible explanation effects S.