作者: O. J. Anttila , M. V. Tilli , M. Schaekers , C. L. Claeys
DOI: 10.1149/1.2069362
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摘要: Chemicals from various suppliers were tested for the metal contamination levels left on silicon wafers after cleaning. During investigations, hydrochloric acids and ammonium hydroxides three vendors hydrogen peroxides four vendors, evaluated. The cleaned in RCA standard solutions, which particle counts measured. Total reflection x-ray fluorescence analysis was used measurements. Hot hydroxide-hydrogen peroxide mixture (APM), an efficient remover, results iron deposition