Current sharing between parallel IGBTs in power modules during short circuit with unsymmetrically connected load
作者： M. Spang , G. Katzenberger
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摘要: Inhomogeneous current sharing between parallel IGBTs can compromise the capability of power modules to withstand short circuit events. Especially if gate voltages are influenced by coupling effects, single will carry excessive currents. This paper analyzes effects different parameters on maximum a 1.7kV module composed three half bridge units with unsymmetrically connected load. Numerical simulations based geometry performed and compared measurements. Measures for improvement in discussed.
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