Experimental analysis and modeling of multi-chip IGBT modules short-circuit behavior
作者： A. Castellazzi , M. Johnson , M. Piton , M. Mermet-Guyennet
DOI: 10.1109/IPEMC.2009.5157400
关键词:
摘要: Considering the case of railway-traction applications, this paper proposes an extensive experimental characterization multi-chip IGBT-modules, combining fast-transient short-circuit electrical measurements with infrared thermal mapping under realistic operation-like working-conditions. Then, it presents development a comprehensive electro-thermal compact model assembly, which accounts for all major functional and structural effects can be used in common circuit simulation environments great flexibility. A selection examples demonstrates usefulness extending complementing information that gained by experiment. The results provide precious reliable application these components.
sci-hub.se 参考文章(12)
John Gowar, Duncan A. Grant, Vítězslav Benda, Power Semiconductor Devices: Theory and Applications ,(1999)
R. Kraus, P. Turkes, J. Sigg, Physics-based models of power semiconductor devices for the circuit simulator SPICE power electronics specialists conference. ,vol. 2, pp. 1726- 1731 ,(1998) , 10.1109/PESC.1998.703414
A. Castellazzi, M. Ciappa, W. Fichtner, G. Lourdel, M. Mermet-Guyennet, Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications Microelectronics Reliability. ,vol. 46, pp. 1754- 1759 ,(2006) , 10.1016/J.MICROREL.2006.07.055
Mauro Ciappa, Alberto Castellazzi, Reliability of High-Power IGBT Modules for Traction Applications international reliability physics symposium. pp. 480- 485 ,(2007) , 10.1109/RELPHY.2007.369938
PA Mawby, PM Igic, MS Towers, None, Physically based compact device models for circuit modelling applications Microelectronics Journal. ,vol. 32, pp. 433- 447 ,(2001) , 10.1016/S0026-2692(01)00013-1
Mauro Ciappa, Selected failure mechanisms of modern power modules Microelectronics Reliability. ,vol. 42, pp. 653- 667 ,(2002) , 10.1016/S0026-2714(02)00042-2
A.R. Hefner, D.L. Blackburn, Thermal component models for electro-thermal network simulations semiconductor thermal measurement and management symposium. ,vol. 17, pp. 413- 424 ,(1993) , 10.1109/95.311751
C. Abbate, G. Busatto, R. Manzo, L. Fratelli, B. Cascone, G. Giannini, F. Iannuzzo, Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area power electronics specialists conference. ,vol. 4, pp. 2588- 2592 ,(2004) , 10.1109/PESC.2004.1355238
David L. Blackburn, Allen R. Hefner, Thermal Component Models for Electrothermal Network Simulation IEEE Transactions on Components and Packaging Technologies. ,(1994)
S. N. Sze, Physics of semiconductor devices privacy in statistical databases. ,(1969)