Structural investigation of InSe layered semiconductors
作者： I. Grimaldi , T. Gerace , M.M. Pipita , I.D. Perrotta , F. Ciuchi
DOI: 10.1016/J.SSC.2020.113855
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摘要: Abstract During the last decade, III–VI layered semiconductors (GaSe, InSe, GaS, etc.) have emerged as potential candidates for various applications, such FET and optoelectronic devices. The properties of this class materials are strongly dependent on their structure, existence different polytypes makes it necessary identification structural phase. In work, we performed a detailed investigation crystal structure morphology bulk by means X-ray diffraction (XRD), transmission electron microscopy (TEM) Raman spectroscopy. combination employed techniques allowed to identify phase InSe samples ( ϵ polytype). Most importantly, show that only crossing information each technique is possible unambiguously discern between similar polytypes.
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