An analytical mobility model for square Gate-All-Around MOSFETs
作者： IM Tienda-Luna , JB Roldan , FG Ruiz , CM Blanque , F Gamiz
DOI: 10.1016/J.SSE.2013.02.058
关键词:
摘要: Abstract A low-field mobility model for square GAA MOSFETs has been developed. The is analytical and explicit, so it can be used in device simulators and, most importantly, compact models of these Multi-gate devices circuit simulation purposes. We have made use a simulator that includes quantum effects to characterize the electron with different sizes usual gate voltages operation regimes. dependencies silicon core lateral size, inversion charge surface roughness are included. phonon, Coulomb components modeled separately by means Matthiessen rule. Finally, we performed comparison between our experimental results validation find well reproduced model.
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