T-type 3-level IGBT power module using authentic reverse block-ing IGBT (RB-IGBT) for renewable energy applications

作者: Shuangching Chen , David H Lu , Hiroki Wakimoto , Haruo Nakazawa , Masahito Otsuki

DOI: 10.1109/IFEEC.2013.6687508

关键词:

摘要: This paper describes the impacts on performance improvement in power conversion systems with newly developed T-type 3-level IGBT module, which authentic Reverse Blocking (RB-IGBT) are implemented. The latest generation IGBT-FWD chipsets installed as main switches and anti-paralleled RB-IGBTs work AC-bidirectional switch. simplest combination semiconductor chipset makes it possible to pack more into smaller package well reduction dissipation, contributes size systems. In this paper, 1200V-300A full T-leg 4in1 modules promise wider application opportunity introduced. As an example, 1MW solar inverter of improved efficiency high 98.5% will be discussed.

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