Dynamic characteristic evaluation of a 600V reverse blocking IGBT device
作者： Oleksandr Korkh , Andrei Blinov
DOI: 10.1109/AIEEE.2017.8270527
关键词:
摘要: This paper presents an overview and analysis of operation RB IGBT transistors. The series experiments is devoted characterisation 600 V, 85 A devices under hard soft switching conditions using a double-pulse test circuit. behaviour, particularly turn-on turn-off characteristics, these various are evaluated. Obtained results allow to assess the impact reverse recovery process on losses compare characteristic IGBTs with types discrete diodes.
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