Identification of Atomically Sharp Concentration Steps in Solids

摘要: Controlled sputter removal of a solid in conjunction with one the recent methods for surface analysis has become most sensitive technique determination concentration depth profiles and transitions at thin film interfaces [1]. As microsectioning by sputtering occurs an atomic scale, as information mass spectrometric techniques SNMS SIMS or Auger electron spectroscopy AES appropriate peaks is confined to first two outermost layers, identification atomically sharp steps should be possible principle. Even when minimizing all interfering instrumental influences (for review see [2]), there exist, however, several physical processes fundamental nature which cause residual broadening effects high resolution profiling. These are always connected mechanism. Their origin their briefly discussed following.