Measurement of band offsets and shunt resistance in CdTe solar cells through temperature and intensity dependence of open circuit voltage and photoluminescence

摘要: Abstract Band offsets at the back contact and front window layer in CdTe-based solar cells affect photovoltaic performance challenge standard characterization methods. By analyzing temperature excitation dependence of both open circuit voltage absolute photoluminescence intensity, we show that effects band can be separated from recombination shunting. Solar were grown with MgZnO layers compared to CdS containing varying amounts oxygen. It was demonstrated alignment rather than reduced velocity is reason for success as a interface contact. An assortment thin interlayers also deposited, PbTe interlayer showed some promise an Ohmic CdTe, though it appears induce photoconductive shunt. Finally, shunting resistance given by current-voltage curve technique generally does not represent physically meaningful quantity unless well below one kiloOhm square cm.