Power Dissipation Analysis of CMOS VLSI Circuits by means of Switch-Level Simulation
作者： C.M. Huizer
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摘要: A method has been defined to analyze the power dissipation of CMOS VLSI circuits by means switch-level simulation. Random vectors are used as stimuli circuit ensure vector-independentness. The implemented using an existing mixed-level simulator. Results described for a range circuits, including 20,000 transistor one.
参考文章(2)
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