Radio frequency IC device and method of manufacturing the same
作者： Makoto Osamura , Kenji Kubota , Noboru Kato
DOI:
关键词:
摘要: A radio frequency IC device that prevents variations in the value of capacitive coupling between a element and radiation electrode has good signal transmission efficiency includes including input/output electrodes and, first base intermediate are capacitively coupled to have capacitance values C 1 b , respectively, second 2 b, respectively. obtained by combining is smaller than b.
lens.org 参考文章(302)
Maegawa Shigeto, Horita Katsuyuki, Ipposhi Takashi, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE ,(2006)
誠 梅田, Makoto Umeda, Inspection system for rf-id ,(2001)
Yasutake Fujiki, 保武 藤木, Yasuto Tai, 均 藤井, 靖人 田井, Hitoshi Fujii, Manufacturing method for ic card ,(2001)
Jun Karasawa, Masao Segawa, Yasuhito Saito, Radio IC card ,(2000)
Harufumi Mandai, Noboru Kato, Ikuhei Kimura, Information terminal device ,(2008)
Izuru Kiyokawa, 隆浩 清水, Takahiro Shimizu, 津 小出, Shin Koide, 出 清川, Information terminal device ,(2004)
Takatsugu Komatsu, 隆次 小松, Semiconductor device and its manufacturing process ,(2003)
正好 山内, Masayoshi Yamauchi, Takao Tsuda, 隆夫 津田, Card and production thereof ,(1999)
Ikuo Takahashi, Naohisa Takayama, 陽次 礒田, 直久 高山, Yoji Isoda, 郁夫 高橋, Data communication device ,(2002)
Tomoaki Ito, 智章 伊藤, Non-contact ic medium ,(2007)