Alignment Of Mask Patterns To Crystal Orientation

摘要: This work describes a simple method for aligning mask features to the crystallographic orientation on [100] silicon wafers. For some micromachined devices more precise alignment than that offered by wafer flat is required. In order do this, aids, can be viewed using conventional aligner or an e-beam lithography system, are etched into silicon. At same time as aids etched, other show which set of most closely aligned direction also etched. Using this method, it possible determine crystal accuracy 0.1/spl deg/, and align subsequent patterns this.