Precise mask alignment to the crystallographic orientation of silicon wafers using wet anisotropic etching
作者： Mattias Vangbo , Ylva Bäcklund
DOI: 10.1088/0960-1317/6/2/011
关键词:
摘要: A design tool for fast and precise determination of the crystallographic orientation in (001) (011) silicon wafers using anisotropic wet etching is introduced. The takes advantage symmetric under-etching behaviour around, but not at (!), -directions. pattern needs to be etched only a short time, after very quick optical inspection it can used aligning subsequent masks, same masking layer, more or less automatically. Two effects were investigated number common etchants: KOH, KOH with isopropyl alcohol (KOH/IPA), ethylenediamine based solutions (EDP), tetramethyl ammonium hydroxide (TMAH). precision method was found most cases better than .
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