Blech effect in single-inlaid Cu interconnects
作者： S. Thrasher , C. Capasso , L. Zhao , R. Hernandez , P. Mulski
关键词:
摘要: This work demonstrates that we can prevent electromigration failures in single-inlaid copper during DC testing by taking advantage of the Blech effect. Electromigration tests were performed on metal lines ranging from 5 to 250 /spl mu/m length at 300/spl deg/C and a stress current density 1.4/spl times/10/sup 6/ A/cm/sup 2/. Shorter showed no resistance increase, while longer failed same time, independent line length. The critical product (jl)/sub c/ was calculated be between 2800 3500 A/cm for copper.
sci-hub.se 参考文章(4)
James R Lloyd, Frederick G Yost, Paul S Ho, Materials reliability issues in microelectronics Pittsburgh, PA (United States); Materials Research Society. ,(1991)
KL Lee, CK Hu, King-Ning Tu, None, IN SITU SCANNING ELECTRON MICROSCOPE COMPARISON STUDIES ON ELECTROMIGRATION OF CU AND CU(SN) ALLOYS FOR ADVANCED CHIP INTERCONNECTS Journal of Applied Physics. ,vol. 78, pp. 4428- 4437 ,(1995) , 10.1063/1.359851
M. Gall, J. Müller, D. Jawarani, C. Capasso, R. Hernandez, H. Kawasaki, Critical Length and Resistance Saturation Effects in Al(Cu) Interconnects MRS Proceedings. ,vol. 516, pp. 231- ,(1998) , 10.1557/PROC-516-231
I. A. Blech, Electromigration in thin aluminum films on titanium nitride Journal of Applied Physics. ,vol. 47, pp. 1203- 1208 ,(1976) , 10.1063/1.322842