作者: Yann-Cherng Chern , Yen-Chu Chen , Hung-Ruei Wu , Hsiao-Wen Zan , Hsin-Fei Meng
DOI: 10.1016/J.ORGEL.2016.09.009
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摘要: Abstract We report that the use of a CH3NH3PbCl3 interlayer onto PEDOT:PSS layer in two-step solution deposition CH3NH3Pbl3 for planar p-i-n type perovskite solar cells (PSCs) can lead to dramatic enhancement short-circuit current density (Jsc) by 52.8% from 13.07 mA cm−2 19.98 mA cm−2. While absorption and thus composition layers remain unchanged, Incident photon-to-current efficiency (IPCE) measurement results reveal much enhanced carrier transport, which turn be correlated larger more columnar grain structure with interlayer. On other hand, processed without exhibit smaller cross-hatching yield significantly Jsc. Therefore our revealed clearly insertion interlayer, affects nucleation dynamics, may control improve dramatically photovoltaic performance resultant PSCs. Our serve as an effective method PSCs achieve high Jsc thicker layer.