Phase Stabilization and Phonon Properties of Single Crystalline Rhombohedral Indium Oxide

摘要: We report on the phase stabilization of rhombohedral (rh-) In2O3 films sapphire substrate deposited by metal organic chemical vapor deposition. With help a high-temperature nucleation layer and evolutionary structural selection during growth process, stable epitaxial single crystalline rh-In2O3 is achieved. The mechanism selective studied means high-resolution X-ray diffraction transmission electron microscopy measurements. Furthermore, Raman spectroscopy measurements are carried out to investigate phonon properties rh-In2O3. Raman-active modes first identified.