Domain matching epitaxy of cubic In2O3 on r‐plane sapphire
作者： Patrick Vogt , Achim Trampert , Manfred Ramsteiner , Oliver Bierwagen
关键词: Crystallography 、 Epitaxy 、 Scanning electron microscope 、 Nucleation 、 Raman scattering 、 Diffraction 、 Indium 、 Sapphire 、 Materials science 、 Molecular beam epitaxy
摘要: Undoped, Sn-doped, and Mg-doped In2O3 layers were grown on rhombohedral r-plane sapphire (α-Al2O3 (10.2)) by plasma-assisted molecular beam epitaxy. X-ray diffraction Raman scattering experiments demonstrated the formation of phase-pure, cubic (110)-oriented for Sn- Mg-concentrations up to 2 × 1020 6×1020cm−3, respectively. Scanning electron microscopy images showed facetted domains without any surface-parallel (110) facets. High Mg- or Sn-doping influenced surface morphology facet formation. Φ-scans indicated two rotational separated an angle Ф = 86.6° due substrate mirror-symmetry around in-plane-projected Al2O3 c-axis. The in-plane epitaxial relationships determined both domains. For first domain it is Al2O3[01.0] ∥ In2O3[33¯ 4¯]. second inplane relation In2O3[33¯4]. A low-mismatch coincidence lattice indium atoms from film oxygen rationalizes this domain-matched Cross-sectional transmission-electron microsopy a columnar domain-structure, indicating vertical growth after their nucleation. Coincidence structure (In in red) (10.2) (O blue) showing domians.
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