Time resolved electro-optic measurements in strained silicon racetrack resonators

摘要: In this paper, we report on time resolved electro-optic measurements in strained silicon resonators. Strain is induced by applying a mechanical deformation to the device. It demonstrated that linear effect vanishes when applied voltage modulation varies much faster than free carrier lifetime, and occurs independently level of stress. This demonstrates that, at frequencies which lie below recombination rate, caused plasma dispersion. After normalizing out effects, it found an upper limit χ(2) = (8 ± 3) pm/V value strain χ eff,zzz (2) tensor component. order magnitude lower previously reported values for static measurements.