Semiconductor laser device for pulse laser oscillation

摘要: A pulsed semiconductor laser has a lower threshold current and more stable pulse train. The structure includes saturable absorber section quantum well for oscillation, gain section, phase control super grating-distributed Bragg reflector section. It uses an improved construction overcoming problems of conventional lasers. five layers having thicknesses with respective spontaneous emission peak wavelengths "λ-2δ", "λ+δ", "λ+2δ", "λ", "λ-δ" at room temperature from their upper λ denotes the mean wavelength oscillating laser, δ fixed value less than 12 nm. sampling sections, each kinds different pitches arranged in order 25 cycles, 5 cycles.