Intrinsic Resistivity and Electron Mean Free Path in Aluminum Films

摘要: Measurements of the electrical resistivity at 296° and 4.2°K in aluminum films, evaporated both an ion‐pumped ultrahigh‐vacuum system conventional oil‐pumped systems onto unheated glass substrates, are presented used to calculate intrinsic mean free path 4.2°K. It is shown that UHV films characterized by a maximum order 1 μ smaller residual resistances than other films. While so obtained still several orders magnitude published value for high‐purity foils bulk aluminum, it nevertheless not small enough appreciably influence 296°K which measured be ≈60% higher value. This discrepancy, may due structural effects, emphasizes view sample artifact adding thermal can misleading case thin even when surface scattering accounted for.