Characterisation of InGaAs/GaAs Quantum Dot Lasers Grown by Metal-Organic Vapour Phase Epitaxy
作者： P. Lever , Z. Lowrie-Nunes , M. Buda , Hark Hoe Tan , C. Jagadish
DOI: 10.1109/COMMAD.2004.1577544
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摘要: A major problem facing quantum dot lasers is gain saturation. This caused by low volume and also a wavefunction overlap within the dots. One method to increase number of layers paper compares characteristics with three five It shown that layer devices can be made improved efficiency wavelength without significant in losses
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