Absence of correlation between built-in electric dipole moment and quantum Stark effect in single InAs/GaAs self-assembled quantum dots
作者： Weidong Sheng , Jean-Pierre Leburton
DOI: 10.1103/PHYSREVB.67.125308
关键词: Condensed matter physics 、 Field (physics) 、 Stark effect 、 Ground state 、 Dipole 、 Transition dipole moment 、 Physics 、 Electric dipole moment 、 Electric dipole transition 、 Electric field
摘要: We report significant deviations from the usual quadratic dependence of ground-state interband transition energy on applied electric fields in single InAs/GaAs self-assembled quantum dots. While earlier works have used conventional second-order perturbation theory to claim a negative dipole moment presence external field, we show that this fails correctly describe Stark shift for field below $F=10\mathrm{k}\mathrm{V}/\mathrm{c}\mathrm{m}$ high Eight-band $\mathbf{k}\ensuremath{\cdot}\mathbf{p}$ calculations demonstrate effect is predominantly due three-dimensional strain distribution which various dot shapes and stoichiometric compositions drastically affect hole ground state.
harvard.edu
arxiv.org
sci-hub.se 参考文章(18)
D Bimberg, M Grundmann, D, NN Ledentsov, Quantum dot heterostructures ,(1999)
Daniel Gammon, Electrons in artificial atoms Nature. ,vol. 405, pp. 899- 900 ,(2000) , 10.1038/35016189
L. Samuelson, Craig Pryor, M. E. Pistol, Electronic structure of strained I n P / G a 0.51 In 0.49 P quantum dots Physical Review B. ,vol. 56, pp. 10404- 10411 ,(1997) , 10.1103/PHYSREVB.56.10404
Craig Pryor, Quantum wires from coupled InAs/GaAs strained quantum dots arXiv: Materials Science. ,(1998) , 10.1103/PHYSREVLETT.80.3579
P. W. Fry, I. E. Itskevich, D. J. Mowbray, M. S. Skolnick, J. J. Finley, J. A. Barker, E. P. O'Reilly, L. R. Wilson, I. A. Larkin, P. A. Maksym, M. Hopkinson, M. Al-Khafaji, J. P. R. David, A. G. Cullis, G. Hill, J. C. Clark, Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots web science. ,vol. 84, pp. 733- 736 ,(2000) , 10.1103/PHYSREVLETT.84.733
D. G. Deppe, D. L. Huffaker, Quantum dimensionality, entropy, and the modulation response of quantum dot lasers Applied Physics Letters. ,vol. 77, pp. 3325- 3327 ,(2000) , 10.1063/1.1328090
Zhonghui Chen, Eui-Tae Kim, Anupam Madhukar, Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots Applied Physics Letters. ,vol. 80, pp. 2770- 2772 ,(2002) , 10.1063/1.1468896
L Landin, MS Miller, M-E Pistol, CE Pryor, L Samuelson, Optical Studies of Individual InAs Quantum Dots in GaAs: Few-Particle Effects Science. ,vol. 280, pp. 262- 264 ,(1998) , 10.1126/SCIENCE.280.5361.262
I. Kegel, T. H. Metzger, A. Lorke, J. Peisl, J. Stangl, G. Bauer, J. M. García, P. M. Petroff, Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots Physical Review Letters. ,vol. 85, pp. 1694- 1697 ,(2000) , 10.1103/PHYSREVLETT.85.1694
Weidong Sheng, Jean-Pierre Leburton, Interband transition distributions in the optical spectra of InAs/GaAs self-assembled quantum dots Applied Physics Letters. ,vol. 80, pp. 2755- 2757 ,(2002) , 10.1063/1.1469214