Electronic states of coupled quantum dot-ring structure under lateral electric field with and without a hydrogenic donor impurity
作者： M.G. Barseghyan
DOI: 10.1016/J.PHYSE.2015.01.044
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摘要: Abstract A detailed investigation of the lateral electric field effect on single electron states in coupled quantum dot-ring structure has been systematically studied for cases with and without an on-center hydrogenic donor impurity. The energy spectrum found using effective mass approximation exact diagonalization technique. ground state's probability density examined different values confinement energies depth dot relative to bottom ring barrier thickness. level's dependence strength considering effects mentioned parameters
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