Amorphous and microcrystalline silicon deposited by hot-wire chemical vapor deposition at low substrate temperatures: application to devices and thin-film microelectromechanical systems
作者： J.P Conde , P Alpuim , M Boucinha , J Gaspar , V Chu
DOI: 10.1016/S0040-6090(01)01222-6
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摘要: Abstract Amorphous silicon and microcrystalline have been deposited on glass plastic (PET) substrates using hot-wire chemical vapor deposition (HW) at substrate temperatures ( T sub ) of 100°C 25°C. The optoelectronic structural properties intrinsic doped films are reviewed. Intrinsic HW a-Si:H is incorporated into a p-i-n diode processed maximum temperature 100°C, achieving rectification ratio 10 6 . mechanical (residual stress) low- layers compared to those radio-frequency-deposited layers. Doped-microcrystalline show piezoresistive behavior. resistance n-type decreases with applied tensile stress increases compressive stress, while p-type the opposite adequate for their use as in thin-film microelectromechanical systems (MEMS). electrical actuation surface micromachined bridge structures microresonators large area demonstrated.
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