Electrical properties of SrBi2Ta2O9 ferroelectric thin films at low temperature
作者： Pingxiong Yang , David L. Carroll , John Ballato , Robert W. Schwartz
DOI: 10.1063/1.1527700
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摘要: The temperature dependence of electrical properties for SrBi2Ta2O9 thin film capacitors with platinum electrodes (Pt/SBT/Pt) on silicon wafers was studied from 10 to 300 K. With a decrease in 200 K, the remanent polarization films shows about an 11% reduction its K value; however, it is reduced by 87% value when drops 100 fatigue significant, and capacitor approximate 29% initial following 1010 cycles. dielectric response leakage current were also over same lower region. These results are helpful understanding fatigue-free behavior observed at room provide additional insight into their use ferroelectric memory applications.
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