Focused ion beam technology

作者: K Gamo

DOI: 10.1088/0268-1242/8/6/020

关键词:

摘要: Focused ion beam (FIB) technology has the advantage of being a maskless process compatible with UHV processing. This makes it attractive for use in situ processing and been applied to fabrication various mesoscopic structures. The present paper reviews these results whilst putting emphasis on by combined FIB molecular epitaxy system. typical performance systems is also presented. In order utilize potential advantages processing, reduction damage improvement throughput are important, much effort devoted developing techniques which require reduced dose. importance low-energy discussed.

参考文章(37)
H. Arimoto, In situ two-dimensional electron gas fabrication by focused Si ion beam implantation and molecular beam epitaxy overgrowth Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 9, pp. 2675- 2678 ,(1991) , 10.1116/1.585670
Kenji Gamo, Takao Matsui, Susumu Namba, Characteristics of Be–Si–Au Ternary Alloy Liquid Metal Ion Sources Japanese Journal of Applied Physics. ,vol. 22, ,(1983) , 10.1143/JJAP.22.L692
Yukinori Ochiai, Kazuhiko Shihoyama, Takao Shiokawa, Koichi Toyoda, Akio Masuyama, Kenji Gamo, Susumu Namba, Maskless Etching of AN Using Focused Ion Beam Japanese Journal of Applied Physics. ,vol. 25, pp. L526- L529 ,(1986) , 10.1143/JJAP.25.L526
Syoji Yamada, Hiromitsu Asai, Yoshino K. Fukai, Takashi Fukui, Mesoscopic properties of on-facetAlxGa1−xAs/GaAssubmicron channels Physical Review B. ,vol. 39, pp. 11199- 11202 ,(1989) , 10.1103/PHYSREVB.39.11199
Y. Sugimoto, K. Akita, M. Taneya, H. Hidaka, Submicron pattern etching of GaAs by in situ electron beam lithography using a pattern generator Applied Physics Letters. ,vol. 57, pp. 1012- 1014 ,(1990) , 10.1063/1.103551
M. W. Geis, G. A. Lincoln, N. Efremow, W. J. Piacentini, A novel anisotropic dry etching technique Journal of Vacuum Science and Technology. ,vol. 19, pp. 1390- 1393 ,(1981) , 10.1116/1.571216
Yukinori Ochiai, Characteristics of maskless ion beam assisted etching of silicon using focused ion beams Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 4, pp. 333- 336 ,(1986) , 10.1116/1.583325
H. Arimoto, M. Kosugi, H. Kitada, E. Miyauchi, Photochemical fine etching using FIB-induced damage in GaAs for in-situ dry processing Microelectronic Engineering. ,vol. 9, pp. 321- 324 ,(1989) , 10.1016/0167-9317(89)90071-3
L. W. Swanson, G. A. Schwind, A. E. Bell, Measurement of the energy distribution of a gallium liquid metal ion source Journal of Applied Physics. ,vol. 51, pp. 3453- 3455 ,(1980) , 10.1063/1.328197
Zheng Xu, Kenji Gamo, Takao Shiokawa, Susumu Namba, In situ patterning of Si3N4 by an ion-beam-induced gas surface reaction Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 39, pp. 750- 753 ,(1989) , 10.1016/0168-583X(89)90890-2