In situ two-dimensional electron gas fabrication by focused Si ion beam implantation and molecular beam epitaxy overgrowth

摘要: We have demonstrated the possibility of in situ two‐dimensional electron gas (2DEG) fabrication GaAs/AlGaAs heterostructures, using focused ion beam implanter and molecular epitaxy (FIBI‐MBE) crystal growth system. 2DEGs are formed a GaAs channel layer which is overgrown on an AlGaAs supply implanted selectively with Si‐FIBs. Implanted Si atoms activated by rapid thermal annealing (RTA). confirmed 2DEG formation Shubnikov–de Haas oscillation. clarified influence implantation damage quality epilayers obtained extremely high mobility 32 000 cm2/V s at 77 K 48 000 20 K. also discussed possible quantum‐size doping direct FIB implantation, considering lateral scattering incident ions substrate.