Photoelectric conversion device and camera
作者： Takeshi Ichikawa , Yoshihisa Kabaya , Mineo Shimotsusa , Hajime Ikeda , Takanori Watanabe
DOI:
关键词:
摘要: A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the element isolation and channel stop region which covers at least lower portion of wherein form photodiode, diffusion coefficient dominant impurity is smaller than layer.
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