Three dimensional stacking memory film structure

摘要: A memory device includes a plurality of stacks alternating active strips and insulating strips. The have effective oxide thicknesses (EOT) so that the non-simple spatial periods on line through conductive lines are arranged orthogonally over, surfaces conformal with, stacks, defining multi-layer array interface regions at cross-points between side in lines. Memory elements disposed regions, which establish 3D cells accessible via can include first group having EOT second is greater than EOT.