Low dielectric constant insulating material in 3d memory
作者： Guan-Ru Lee
DOI:
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摘要: A memory device includes a plurality of stacks conductive strips alternating with insulating strips. At least one the an material dielectric constant equal to or lower than 3.6. structures is arranged orthogonally over stacks. Memory elements are disposed in interface regions at cross-points between side surfaces and structures. The can have equivalent oxide thicknesses EOT substantially greater their respective physical thicknesses. be 10% consist essentially
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