Memory device including pass transistors in memory tiers
作者： Toru Tanzawa
DOI:
关键词:
摘要: Some embodiments include apparatuses and methods of using such apparatuses. One the includes a semiconductor material, pillar extending through select gate located along first portion pillar, memory cells second transistors coupled to material. The sources drains formed from portions gates that are electrically uncoupled each other.
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