Assessment of the ionized EL2 fraction in semi‐insulating GaAs
作者： J. S. Blakemore , L. Sargent , R‐S. Tang , E. M. Swiggard
DOI: 10.1063/1.101163
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摘要: Both optical and electrical methods were used to provide separate evaluations of the fraction Pi EL2 defect donors which have lost an electron. The semi‐insulating GaAs permitted these assessments had a large enough compensated (by CAs acceptors) make this sensitive test. Room‐temperature Hall effect data, analyzed with ambipolar correction, indicated that ≂0.34 in material from vertical‐zone grown crystal, while near‐infrared absorption could be modeled on superposition photoionization photoneutralization yield ≂0.35 same crystal. presence compensating acceptors was verified by local mode vibrational absorption.
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