Annealing of GaAs grown by vertical zone melting
作者： P.E.R. Nordquist , R.L. Henry , J.S. Blakemore , S.B. Saban , R.J. Gorman
DOI: 10.1016/0022-0248(94)90235-6
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摘要: Abstract Semi-insulating GaAs grown by the vertical zone melting (VZM) method has a low density of etch pits (about (1–4)×103 cm-2), but concentration EL2 7×1015 cm-3). We find that annealing VZM either two-step or one-step process increases mobility and raises to 14×1015 cm-3, while pit remains low. The works equally well whether applied as post-growth an in-situ procedure done during cool-down from crystal growth temperature. In process, cooling about 600°C before reheating is essential for in occur.
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