Annealing of GaAs single crystal: Relationship between electrical properties and structural defects
作者： Byung‐Teak Lee , Edith D. Bourret , Ronald Gronsky , In‐shik Park
DOI: 10.1063/1.343063
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摘要: The behavior of As‐related structural defects (dislocation loops and As precipitates) the changes in EL2 concentration during bulk annealing an As‐rich GaAs crystal were studied temperature range 500–900 °C. Results show that increases some dissolve above 600 °C, indicating source point necessary to form is excess condensed growth various forms. It was observed condenses as defects, dislocation loops, and/or precipitates, depending upon cooling rate from high temperatures availability nucleation sites (dislocations). also determined solvus for studied, with about 1016/cm3, lies between 600 700 °C.
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