Interaction between Dislocations and Non-Radiative Recombination Centers in GaAs

摘要: Interaction of non-radiative recombination centers with dislocations in a LEC-grown GaAs crystal is investigated by observing the change cathodoluminescence image caused various heat-treatments. Impurities related to are gettered most effectively at temperature around 750°C. The cause gettering concluded be due reaction incorporating impurities that takes place dislocation core.