Cathodoluminescence image of defects and luminescence centers in ZnS/GaAs(100)
作者： Tadashi Mitsui , Naoki Yamamoto , Toyoyasu Tadokoro , Shin‐ichi Ohta
DOI: 10.1063/1.363770
关键词: Acceptor 、 Substrate (electronics) 、 Transmission electron microscopy 、 Luminescence 、 Analytical chemistry 、 Crystallographic defect 、 Materials science 、 Cathodoluminescence 、 Stacking fault 、 Molecular physics 、 Exciton
摘要: The spatial distributions of the cathodoluminescence (CL) emissions from thin ZnS films on GaAs(100) have been examined by low‐temperature CL measurement system combined with a transmission electron microscope (TEM). correlation between these and structural defects were studied comparing monochromatic images TEM for both plan‐view cross‐sectional observations. It is found that neutral acceptor–bound exciton associated emission (A0,X) free‐electron‐to‐ionized acceptor transition (e,A) are affected stacking fault distribution. localization due to deep‐level near interface suggest diffusion Ga atoms GaAs substrate. characteristic regions can be explained considering competitions among recombination channels those radiative processes each type an excess carrier, electron, or hole.
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