Comment on ``Identification of a defect in a semiconductor: EL2 in GaAs''
作者： H. C. Gatos , J. Lagowski
关键词:
摘要:
harvard.edu
sci-hub.se 参考文章(12)
H. J. von Bardeleben, D. Stiévenard, D. Deresmes, A. Huber, J. C. Bourgoin, Identification of a defect in a semiconductor: EL2 in GaAs. Physical Review B. ,vol. 34, pp. 7192- 7202 ,(1986) , 10.1103/PHYSREVB.34.7192
H. C. Gatos, J. Lagowski, EL2 and Related Defects in GaAs--Challenges and Pitfalls MRS Proceedings. ,vol. 46, pp. 153- ,(1985) , 10.1557/PROC-46-153
Jiro Osaka, Fumiaki Hyuga, Kazuo Watanabe, Electrical property improvements in In‐doped dislocation‐free GaAs by bulk annealing Applied Physics Letters. ,vol. 47, pp. 1307- 1309 ,(1985) , 10.1063/1.96313
J. Lagowski, H. C. Gatos, C. H. Kang, M. Skowronski, K. Y. Ko, D. G. Lin, Inverted thermal conversion—GaAs, a new alternative material for integrated circuits Applied Physics Letters. ,vol. 49, pp. 892- 894 ,(1986) , 10.1063/1.97527
G. M. Martin, Optical assessment of the main electron trap in bulk semi‐insulating GaAs Applied Physics Letters. ,vol. 39, pp. 747- 748 ,(1981) , 10.1063/1.92852
M. Skowronski, J. Lagowski, H. C. Gatos, Optical and transient capacitance study of EL2 in the absence and presence of other midgap levels Journal of Applied Physics. ,vol. 59, pp. 2451- 2456 ,(1986) , 10.1063/1.337013
M. Taniguchi, T. Ikoma, Variation of the midgap electron traps (EL2) in liquid encapsulated Czochralski GaAs Journal of Applied Physics. ,vol. 54, pp. 6448- 6451 ,(1983) , 10.1063/1.331925
M. Kamińska, M. Skowroński, W. Kuszko, Identification of the 0.82-eV electron trap, EL2 in GaAs, as an isolated antisite arsenic defect. Physical Review Letters. ,vol. 55, pp. 2204- 2207 ,(1985) , 10.1103/PHYSREVLETT.55.2204
J. A. Van Vechten, Simple Theoretical Estimates of the Schottky Constants and Virtual‐Enthalpies of Single Vacancy Formation in Zinc‐Blende and Wurtzite Type Semiconductors Journal of The Electrochemical Society. ,vol. 122, pp. 419- 422 ,(1975) , 10.1149/1.2134226
J. F. Wager, J. A. Van Vechten, Atomic model for the EL2 defect in GaAs Physical Review B. ,vol. 35, pp. 2330- 2339 ,(1987) , 10.1103/PHYSREVB.35.2330