One-dimensional heterostructures in semiconductor nanowhiskers
作者： MT Björk , BJ Ohlsson , T Sass , AI Persson , Claes Thelander
DOI: 10.1063/1.1447312
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摘要: We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by InAs/InP material system. Based transmission electron microscopy, we deduce interfaces between InAs and InP to be atomically sharp. Electrical measurements thermionic emission across an 80-nm-wide heterobarrier, positioned inside whiskers 40 nm in diameter, yield a barrier height 0.6 eV. On basis these results, propose new branches physics phenomena as well families device structures that will now possible realize explore.
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